Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations 

Hongrae Joh, Sangho Lee, Jinho Ahn*, Sanghun Jeon*, Journal of Materials Chemistry C, 12(38), 14 October, 15435-15443 (2024) 

A six-level ferroelectric storage cell based on a bidirectional imprint field 

Chaeheon Kim, Junghyeon Hwang, Hunbeom Shin, Jinho Ahn*, Sanghun Jeon*, Journal of Materials Chemistry C, 12(37), September, 15188-15200 (2024) 

Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory 

Junghyeon Hwanga, Hunbeom Shina, Chaeheon Kima, Jinho Ahn*, Sanghun Jeon*, Journal of Materials Chemistry C, November (2024) 

Stabilization of Morphotropic Phase Boundary in Hafniavia Microwave Low-Temperature Crystallization Processfor Next-Generation Dynamic Random Access MemoryTechnology 

Hunbeom Shin, Giuk Kim, Sujeong Lee, Hyojun Choi, Sangho Lee, Sangmok Lee,Yunseok Nam, Geonhyeong Kang, Hyungjun Kim, Jinho Ahn* and Sanghun Jeon*, physica status solidi Rapid Research Letters, 18(9), 13 May, 2400108 (2024) 

Reduced warpage in semiconductor packages: Optimizing post-cure temperature profile considering cure shrinkage and viscoelasticity of epoxy molding compound 

Hui-Jin Um, Young-Min Ju, Dae-Woong Lee, Jinho Ahn*, Hak-Sung Kim*, Materials & Design, 245, 1 September, 113265 (2024) 

Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor 

Hyojun Choi, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Do-Hyung Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn*, Sanghun Jeon*, IEEE Electron Device Letters, 45(12), 23 September, (2024) 

Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET 

Giuk Kim, Hyojun Choi, Sangho Lee, Hunbeom Shin, Sangmok Lee, Yunseok Nam, Hyunjun Kang, Seokjoong Shin, Hoon Kim, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park,  Jinho Ahn*, Sanghun Jeon*, IEEE Transactions on Electron Devices, 71(11), 24 September, (2024) 

Advances in n-type crystalline oxide channel layers for thin-film transistors: materials, fabrication techniques, and device performance 

Gwang-Bok Kim, Cheol Hee Choi, Jae Seok Hur, Jinho Ahn*, Jae Kyeong Jeong*, Journal of Physics D: Applied Physics, 58(1), 14 October, 013001 (2024) 

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO 2 Film by Fast Ramping and Fast Cooling Process 

Lingwei Zhang, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn*, Sanghun Jeon*, IEEE Transactions on Electron Devices, 18 October, (2024) 

The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET 

JUNGHYEON HWANG, GIUK KIM, HONGRAE JOH, JINHO AHN*, SANGHUN JEON*, IEEE Journal of the Electron Devices Society, 12, 24 October, (2024) 

Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue 

Giuk Kim, Hyojun Choi, Hongrae Cho, Sangho Lee, Hunbeom Shin, Hyunjun Kang, Hoon Kim, Seokjoong Shin, Seonjae Park, Sunseong Kwon, Youngjin Lim, Kang Kim, Jong Min Chung, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn*, Sanghun Jeon*, IEEE Electron Device Letters, 45(12), 1 December, (2024) 

Advanced indicone Nanostructuring: Surface engineering with small molecule inhibitors through molecular layer deposition 

Hae Lin Yang, Gi-Beom Park, GeonHo Baek, Jinhong Park, Kwang Heo, Bo Keun Park, Jung-Hoon Lee*, Jinho Ahn*, Jin-Seong Park**, Applied Surface Science 684, 1 March, 161834 (2025)

Enhancing performance of microbolometers by utilizing low-temperature polycrystalline silicon 

Taeseung Jung, Seungyeob Kim, Sangho Lee, Jinho Ahn, and Sanghun Jeon*, Journal of Vacuum Science & Technology B 42(6) , 22 Octocer, 063202 (2024)

Compositionally engineered amorphous InZnO thin-film transistor with high mobility and stability via atmospheric pressure spatial atomic layer deposition 

Chi-Hoon Lee, Kwang Su Yoo, Dong-Gyu Kim, Chang-Kyun Park, Jin-Seong Park, Journal of Industrial and Engineering Chemistry 140 (2024) 269–276

Highly C-axis Aligned ALD-InGaO Channel Improving Mobility and Thermal Stability for Next-Generation 3D Memory Devices 

Seong-Hwan Ryu, Hye-Mi Kim, Dong-Gyu Kim and Jin-Seong Park, Adv. Electron. Mater. 2024, 2400377

Impact of Elongation Stress on Island-Bridge Shaped Oxide Thin-Film Transistors with Metal Interconnects for Stretchable Electronics Applications 

Won-Bum Lee, Min-Seo Kim, and Jin-Seong Park, ACS Appl. Electron. Mater. 2024, 6, 10, 7576–7583

Unveiling growth mechanisms of PEALD In2O3 thin films with amide-based versus alkyl-based novel indium precursors 

Gyeong Min Jeong, Hae Lin Yang, Ara Yoon, Yoon-Seo Kim, Sangick Lee, Yonghee Kwone, Sangyong Jeon, Youngjae Im and Jin-Seong Park*, J. Mater. Chem. C, 2024,12, 10575-10584 

Controlled 2D growth approach via atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors 

Hye-Mi Kim, Won-Bum Lee, Haklim Koo, Seo-Yeong Kim and Jin-Seong Park*, J. Mater. Chem. C, 2024,12, 8390-8397

Reliability Engineering of High-Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition 

Yoon-Seo Kim, Taewon Hwang, Hye-Jin Oh, Joon Seok Park,* and Jin-Seong Park*, Adv. Mater. Interfaces 2024, 11, 2301097

C-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured Semiconductor 

Hye-Mi Kim, Seong-Hwan Ryu, Sangwook Kim, Kwang-Hee Lee and Jin-Seong Park*, ACS Appl. Mater. Interfaces 2024, 16, 12, 14995–15003